| PART |
Description |
Maker |
| K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
| UPD45128163G5-A75-9JF-E UPD45128163-E |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory
|
| PD45128163G5-A10LT-9JF PD45128163G5-A10T-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| PD45128163G5-A10I-9JF PD45128163G5-A10LI-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| UPD45128163G5-A10I-9JF UPD45128163G5-A10LI-9JF UPD |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL WTR (WIDE TEMPERATURE RANGE)
|
ELPIDA[Elpida Memory]
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| M2V28S40TP-7L M2V28S30TP-7L M2V28S30TP-8L M2V28S40 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| EBE10UE8ACFA-8E-E |
128M X 64 SYNCHRONOUS DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Elpida Memory, Inc.
|
